3D Integrated Antennae and RF MEMS
Lead partner: EPFL
Extremely compact RF front-ends with very low power consumption are envisioned by the combination of TSV and RF MEMS.
- 3D EM simulations of the TSV in high-resistivity silicon (HR-Si) substrate will be used for optimization design and a circuit model of the TSV at RF will be extracted.
- A compatible RF MEMS fabrication process will be developed at EPFL in wafers containing TSV on HR-Si (provided by EMFT).
- RF MEM switches, phase shifters and tunable filters will be fabricated as a proof of concept.